Enter the band-gap energy E_g (eV) of a semiconductor or material and compute the corresponding absorbed or emitted photon wavelength (nm) via λ = hc/E_g, to judge emitted color or excitable wavelength.
输入带隙能量 E_g(eV),求对应光子波长。
| Item | Formula / Note | Source / Standard |
|---|---|---|
| Band-gap wavelength | λ ≈ 1240/E_g(eV) nm | Semiconductor optics |
| Absorption edge | λ_c = 1240/E_g cutoff | Semiconductor physics |
| Direct vs indirect | Direct gap radiates efficiently | Optoelectronics |
| Temperature dependence | Varshni empirical relation | Varshni 1967 |
| Common band gaps | Si 1.12 eV, GaAs 1.42 eV | Material data |
| Detector design | Detection below cutoff wavelength | Photodetector principles |